? semiconductor components industries, llc, 2014 april, 2014 ? rev. 2 1 publication order number: nts12100mfs/d nts12100mfs, nrvts12100mfs very low forward voltage trench-based schottky rectifier features ? fine lithography t rench?based schottky technology for very low forward voltage and low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? nrv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these are pb?free and halide?free devices typical applications ? switching power supplies including notebook / netbook adapters, atx and flat panel display ? high frequency and dc?dc converters ? freewheeling and or?ing diodes ? reverse battery protection ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets flammability rating ul 94?0 @ 0.125 in. ? lead finish: 100% matte sn (tin) ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? device meets msl 1 requirements trench schottky rectifiers 12 amperes 100 volts http://onsemi.com 1,2,3 5,6 so?8 fla t lead case 488aa style 2 th1210 = specific device code a = assembly location y = year w = work week zz = lot traceability marking diagram th1210 aywwzz a a a not used c c 1 device package shipping ? ordering information nts12100mfst1g nrvts12100mfst1g so?8 fl (pb?free) 1500 / tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. nts12100mfst3g NRVTS12100MFST3G so?8 fl (pb?free) 5000 / tape & ree l
nts12100mfs, nrvts12100mfs http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r , t c = 137 c) i f(av) 12 a peak repetitive forward current, (rated v r , square wave, 20 khz, t c = 134 c) i frm 24 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 200 a storage temperature range t stg ?65 to +150 c operating junction temperature t j ?55 to +150 c unclamped inductive switching energy (10 mh inductor, non?repetitive) e as 100 mj esd rating (human body model) 3b esd rating (machine model) m4 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol typ max unit thermal resistance, junction?to?case, steady state (assumes 600 mm 2 1 oz. copper bond pad, on a fr4 board) r jc 2.0 ? c/w electrical characteristics characteristic symbol typ max unit instantaneous forward voltage (note 1) (i f = 5 a, t j = 125 c) (i f = 12 a, t j = 25 c) (i f = 5 a, t j = 125 c) (i f = 12 a, t j = 25 c) v f 0.5 0.63 0.44 0.56 ? 0.71 ? 0.64 v instantaneous reverse current (note 1) (v r = 70 v, t j = 25 c) (rated dc voltage, t j = 25 c) (v r = 70 v, t j = 125 c) (rated dc voltage, t j = 125 c) i r 3.4 14.5 3.5 9.2 ? 95 ? 20 a ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width = 300 s, duty cycle 2.0%.
nts12100mfs, nrvts12100mfs http://onsemi.com 3 typical characteristics 0 5 10 15 20 25 80 90 100 110 120 130 140 150 figure 1. typical instantaneous forward characteristics figure 2. maximum instantaneous forward characteristics v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) figure 3. typical reverse characteristics figure 4. maximum reverse characteristics v r , instantaneous reverse voltage (v) v r , instantaneous reverse voltage (v) 90 70 60 50 40 30 10 0 figure 5. typical junction capacitance figure 6. current derating to?220ab v r , reverse voltage (v) t c , case temperature ( c) i f , instantaneous forward current (a) i f , instantaneous forward current (a) i r , instantaneous reverse current (a) c, junction capacitance (pf) i f(av) , average forward current (a) t a = 125 c t a = 150 c t a = 25 c t a = 125 c t a = 150 c t a = 125 c t a = 150 c t a = 25 c 1.e?06 1.e?05 1.e?04 i r , instantaneous reverse current (a) 1.e?03 1.e?02 1.e?01 1.e+00 20 80 100 t a = 125 c t a = 150 c t a = 25 c t j = 25 c r jc = 2.0 c/w square wave dc 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t a = ?55 c 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t a = 25 c t a = ?55 c 1.e?06 1.e?05 1.e?04 1.e?03 1.e?02 1.e?01 1.e+00 0 102030405060708090100 100 1k 10k 0.1 1 10 100
nts12100mfs, nrvts12100mfs http://onsemi.com 4 typical characteristics 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 7. forward power dissipation i f(av) , average forward current (a) 7 6 5 4 3 2 1 0 20 figure 8. thermal characteristics pulse time (sec) p f(av) , average forward pow- er dissipation (w) r(t) ( c/w) 8 i pk /i av = 10 i pk /i av = 20 i pk /i av = 5 t j = 150 c square wave dc assumes 25 c ambient and soldered to a 600 mm 2 ? oz copper pad on pcb 50% duty cycle 20% 10% 5% 2% 1% single pulse 9 18 16 14 12 10 8 6 4 2 0 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 9. typical transient thermal response characteristics, junction?to?case pulse time (sec) r(t) ( c/w) 50% duty cycle 20% 10% 5% 2% 1% single pulse
nts12100mfs, nrvts12100mfs http://onsemi.com 5 package dimensions m 3.00 3.40 0 ??? 3.80 12 dfn5 5x6, 1.27p (so?8fl) case 488aa issue h notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 bsc d1 4.70 4.90 d2 3.80 4.00 e 6.15 bsc e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.61 k 1.20 1.35 l 0.51 0.61 l1 0.05 0.17 a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 3 x c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 0.20 m *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 0.475 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 3x 4x 4x pin 5 (exposed pad) style 2: pin 1. anode 2. anode 3. anode 4. no connect 5. cathode on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nts12100mfs/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
|
